Ellipsometric study of silicon nanocrystal optical constants

被引:99
作者
Amans, D
Callard, S
Gagnaire, A
Joseph, J
Ledoux, G
Huisken, F
机构
[1] Ecole Cent Lyon, LEOM, CNRS, UMR 5512, F-69131 Ecully, France
[2] Max Planck Inst Stromungsforsch, D-37073 Gottingen, Germany
关键词
D O I
10.1063/1.1538344
中图分类号
O59 [应用物理学];
学科分类号
摘要
Samples of silicon nanocrystals on various substrates were prepared by cluster beam deposition of silicon nanoparticles, obtained by laser-induced pyrolysis of silane in a flow reactor. Using optical ellipsometry, the optical properties (refractive index and extinction coefficient) of the as-prepared silicon nanocrystal layers were determined in the wavelength range from 240 to 700 nm. Two dispersion models were used to describe the silicon nanocrystal optical properties: the Bruggeman effective medium approximation model and the Tauc-Lorentz model. The study showed that while a simple Bruggeman effective medium approximation model could not completely account for the silicon nanocrystal dispersion behavior, the optical response of the silicon nanocrystal layers could be satisfactorily described by a Tauc-Lorentz model. The present study also showed that, as for porous silicon, the silicon nanocrystal optical indexes significantly deviate from those of bulk crystalline and amorphous silicon. It confirms the special behavior of silicon under its nanoscale form. (C) 2003 American Institute of Physics.
引用
收藏
页码:4173 / 4179
页数:7
相关论文
共 33 条
[1]   DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA ;
KINSBRON, E .
PHYSICAL REVIEW B, 1984, 29 (02) :768-779
[2]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[3]  
Azzam R., 1977, ELLIPSOMETRY POLARIZ
[5]   Gaining light from silicon [J].
Canham, L .
NATURE, 2000, 408 (6811) :411-412
[6]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[7]   Structural, ellipsometry and photoluminescence spectroscopy studies of silicon nanograins embedded in a silica matrix [J].
Charvet, S ;
Madelon, R ;
Rizk, R .
SOLID-STATE ELECTRONICS, 2001, 45 (08) :1505-1511
[8]   THEORETICAL ASPECTS OF THE LUMINESCENCE OF POROUS SILICON [J].
DELERUE, C ;
ALLAN, G ;
LANNOO, M .
PHYSICAL REVIEW B, 1993, 48 (15) :11024-11036
[9]  
Edwards D.F., 1985, Handbook of optical constants of solids
[10]   Gas-phase characterization of silicon nanoclusters produced by laser pyrolysis of silane [J].
Ehbrecht, M ;
Huisken, F .
PHYSICAL REVIEW B, 1999, 59 (04) :2975-2985