Ferromagnetic GaN-Cr nanowires

被引:46
作者
Wang, Q
Sun, Q
Jena, P
机构
[1] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA
[2] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
关键词
D O I
10.1021/nl051133r
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Using first-principles theory, we predict ferromagnetism in Cr-doped GaN nanowires irrespective of the sites that the Cr atoms occupy. This is in contrast to Mn-doped GaN nanowires in which the magnetic coupling between the Mn atoms is sensitive to the Mn-Mn and Mn-N distances, although the ground state of Mn-doped GaN nanowires is ferromagnetic. Each Cr atom carries a magnetic moment of about 2.5 mu(B). The magnetic moment at the N site, however, is small and is aligned antiferromagnetically to the moments at the Cr atom. The magnetization axis is perpendicular to the axis of the wire, but the anisotropy energy is rather small. The easy solubility of Cr in GaN and the lack of sensitivity of ferromagnetic coupling to Cr distribution suggest that Cr-doped GaN nanowires may be a more suitable system for applications in spintronics than Mn-doped GaN nanowires.
引用
收藏
页码:1587 / 1590
页数:4
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