Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN

被引：32

作者：

Baik, JM ^{[1
]}

Shon, Y

Kang, TW

Lee, JL

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 07期

关键词：

D O I：

10.1063/1.1647282

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700-900degreesC. Compared with Mn-implanted sample, the (Mn+N)-implanted sample revealed a larger ferromagnetic signal. This was attributed to the increase of Ga-Mn magnetic phases. Mn-N compounds, such as Mn6N2.58 and Mn3N2, decreased and the resistivity significantly increased, meaning a reduction of N vacancies. It is suggested that enhancement in ferromagnetic properties in the (Mn+N)-implanted GaN originated from the reduction of N vacancies and the increase of Ga-Mn magnetic phases. (C) 2004 American Institute of Physics.

引用

页码：1120 / 1122

页数：3

共 13 条

[1] Effect of microstructural change on magnetic property of Mn-implanted p-type GaN [J].

Baik, JM ;

Jang, HW ;

Kim, JK ;

Lee, JL .

APPLIED PHYSICS LETTERS, 2003, 82 (04) :583-585

[2] NATIVE DEFECTS IN GALLIUM NITRIDE [J].

BOGUSLAWSKI, P ;

BRIGGS, EL ;

BERNHOLC, J .

PHYSICAL REVIEW B, 1995, 51 (23) :17255-17258

[3]

Dielt T., 2000, SCIENCE, V287, P1019

[4] Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N [J].

Haider, MB ;

Constantin, C ;

Al-Brithen, H ;

Yang, H ;

Trifan, E ;

Ingram, D ;

Smith, AR ;

Kelly, CV ;

Ijiri, Y .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) :5274-5281

[5] Effect of N/Ge co-implantation on the Ge activation in GaN [J].

Nakano, Y ;

Kachi, T .

APPLIED PHYSICS LETTERS, 2001, 79 (10) :1468-1470

[6]

NASREDDINE EF, 1977, SOLID STATE COMMUN, V23, P147, DOI 10.1016/0038-1098(77)90097-7

[7] (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs [J].

Ohno, H ;

Shen, A ;

Matsukura, F ;

Oiwa, A ;

Endo, A ;

Katsumoto, S ;

Iye, Y .

APPLIED PHYSICS LETTERS, 1996, 69 (03) :363-365

[8] Making nonmagnetic semiconductors ferromagnetic [J].

Ohno, H .

SCIENCE, 1998, 281 (5379) :951-956

[9] Molecular beam epitaxy of wurtzite (Ga,Mn)N films on sapphire(0001) showing the ferromagnetic behaviour at room temperature [J].

Sonoda, S ;

Shimizu, S ;

Sasaki, T ;

Yamamoto, Y ;

Hori, H .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 :1358-1362

[10] Magnetic properties of n-GaMnN thin films [J].

Thaler, GT ;

Overberg, ME ;

Gila, B ;

Frazier, R ;

Abernathy, CR ;

Pearton, SJ ;

Lee, JS ;

Lee, SY ;

Park, YD ;

Khim, ZG ;

Kim, J ;

Ren, F .

APPLIED PHYSICS LETTERS, 2002, 80 (21) :3964-3966

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