Magnetic properties of n-GaMnN thin films

被引：327

作者：

Thaler, GT ^{[1
]}

Overberg, ME

Gila, B

Frazier, R

Abernathy, CR

Pearton, SJ

Lee, JS

Lee, SY

Park, YD

Khim, ZG

Kim, J

Ren, F

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea

[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 21期

关键词：

D O I：

10.1063/1.1481533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaMnN thin films were synthesized using gas-source molecular-beam epitaxy. Mn concentrations between 3 and 12 at. % were investigated. No evidence of second-phase formation was observed by powder x-ray diffraction or high-resolution cross section transmission electron microscopy in films with 9% or less Mn. The films were n type as determined by capacitance-voltage or Hall analysis. Magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3% Mn showed the highest degree of ordering per Mn atom. At 320 K, the samples show a nonzero magnetization indicating a T-C above room temperature. (C) 2002 American Institute of Physics.

引用

页码：3964 / 3966

页数：3

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