Effect of N/Ge co-implantation on the Ge activation in GaN

被引:25
作者
Nakano, Y [1 ]
Kachi, T [1 ]
机构
[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan
关键词
D O I
10.1063/1.1400089
中图分类号
O59 [应用物理学];
学科分类号
摘要
N-type regions have been produced in undoped GaN films by Ge and N/Ge implantation, sequentially, and subsequent annealing with a SiO2 encapsulation layer at 1300 degreesC. Improved Ge-doping characteristics have been achieved for GaN by N/Ge co-implantation, attaining activation efficiencies above 95%, whereas in the case of conventional Ge implantation, the activation efficiency is low owing to the generation of N vacancies. In particular, overlapping of the N-implanted region with the Ge one can make the Ge activation higher at a N/Ge ratio of similar to1. Therefore, the co-implantation of additional N atoms drastically enhances the Ge activation based on a site-competition effect. (C) 2001 American Institute of Physics.
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页码:1468 / 1470
页数:3
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