Light-induced frustration of etching in Fe-doped LiNbO3

被引:8
作者
Barry, IE [1 ]
Eason, RW
Cook, G
机构
[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England
[2] Def Evaluat Res Agcy, Malvern WR14 3PS, Worcs, England
基金
英国工程与自然科学研究理事会;
关键词
lithium niobate; etching; laser; frustration;
D O I
10.1016/S0169-4332(99)00087-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report the results of light-induced frustration of the normal etching behaviour observed when LiNbO3 is immersed in a solution of HF and HNO3 acids. Light of wavelength 488 nm, from an air-cooled 100 mW Ar ion laser, is incident on the rear surface (+z-face) of a thin Fe-doped LiNbO3 sample, whose front face (-z-face) is in contact with the etchant solution. At power densities of > 100 W cm(-2), etching is suppressed through light-induced charge migration. Below this power density, partial suppression occurs, leading to submicron scale features, whose orientation follows the crystal symmetry. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:328 / 331
页数:4
相关论文
共 6 条
[1]   Microstructuring of lithium niobate using differential etch-rate between inverted and non-inverted ferroelectric domains [J].
Barry, IE ;
Ross, GW ;
Smith, PGR ;
Eason, RW ;
Cook, G .
MATERIALS LETTERS, 1998, 37 (4-5) :246-254
[2]  
HUIGNARD JP, 1989, TOPICS APPL PHYSICS, V61
[3]   Room-temperature photoenhanced wet etching of GaN [J].
Minsky, MS ;
White, M ;
Hu, EL .
APPLIED PHYSICS LETTERS, 1996, 68 (11) :1531-1533
[4]  
SOLYMAR L, 1996, PHYSICS APPL PHOTORE
[5]   Broad-area photoelectrochemical etching of GaN [J].
Youtsey, C ;
Adesida, I ;
Bulman, G .
ELECTRONICS LETTERS, 1997, 33 (03) :245-246
[6]   Highly anisotropic photoenhanced wet etching of n-type GaN [J].
Youtsey, C ;
Adesida, I ;
Bulman, G .
APPLIED PHYSICS LETTERS, 1997, 71 (15) :2151-2153