Broad-area photoelectrochemical etching of GaN

被引：44

作者：

Youtsey, C ^{[1
]}

Adesida, I ^{[1
]}

Bulman, G ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 03期

关键词：

gallium nitride; etching;

D O I：

10.1049/el:19970121

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A photoenhanced wet chemical etching process for GaN using KOH solution and broad-area Hg lamp illumination is demonstrated. Results are discussed for n(+) GaN, non-intentionally doped GaN, and p-GaN samples.

引用

页码：245 / 246

页数：2

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