学术探索
学术期刊
新闻热点
数据分析
智能评审

Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells

被引：2
作者：
Lüerssen, D
Bleher, R
Kalt, H
Richter, H
Schimmel, T
Rosenauer, A
Litvinov, D
Kamilli, A
Gerthsen, D
Jobst, B
Ohkawa, K
Hommel, D
机构：
[1] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany
[2] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany
[3] Univ Bremen, Inst Festkorperphys, D-28334 Bremen, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷 / 214期
关键词：
ZnSe/ZnMgSSe; quantum wells; stacking faults; microphotoluminescence; TEM; AFM;
D O I：
10.1016/S0022-0248(00)00168-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Pairs of bright spots are observed in microphotoluminescence intensity maps of ZnSe/ZnMgSSe quantum-well structures. These pairs are exactly aligned parallel to the [110] or [(1) over bar 10] directions. Atomic-force microscopy and plan-view transmission electron microscopy reveal that the bright emission spots are related to pairs of stacking faults. The enhanced radiative recombination is a result of exciton localization in the region where the stacking faults intersect the quantum wells. Cross-section transmission electron microscopy and microphotoluminescence spectroscopy show that in the case of Frank-type stacking faults (oriented along [110]) the wells are enlarged by up to 12 bilayers. The exciton localization is much shallower in the case of Shockley-type stacking-fault pairs (oriented along [(1) over bar 10]). (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：634 / 638
页数：5
相关论文
共 7 条
[1]   Influence of p-type doping on the degradation of ZnSe laser diodes [J].
Albert, D ;
Nürnberger, J ;
Hock, V ;
Ehinger, M ;
Faschinger, W ;
Landwehr, G .
APPLIED PHYSICS LETTERS, 1999, 74 (14) :1957-1959
[2]   Transmission electron microscopy and cathodoluminescence studies of extended defects in electron-beam-pumped Zn1-xCdxSe/ZnSe blue-green lasers [J].
Bonard, JM ;
Ganiere, JD ;
Vanzetti, L ;
Paggel, JJ ;
Sorba, L ;
Franciosi, A ;
Herve, D ;
Molva, E .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) :1945-1952
[3]   MICROSTRUCTURE STUDY OF A DEGRADED PSEUDOMORPHIC SEPARATE-CONFINEMENT HETEROSTRUCTURE BLUE-GREEN LASER-DIODE [J].
HUA, GC ;
OTSUKA, N ;
GRILLO, DC ;
FAN, Y ;
HAN, J ;
RINGLE, MD ;
GUNSHOR, RL ;
HOVINEN, M ;
NURMIKKO, AV .
APPLIED PHYSICS LETTERS, 1994, 65 (11) :1331-1333
[4]   Nature and origins of stacking faults from a ZnSe/GaAs interface [J].
Kuo, LH ;
Kimura, K ;
Ohtake, A ;
Miwa, S ;
Yasuda, T ;
Yao, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04) :1241-1253
[5]   Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures [J].
Lüerssen, D ;
Bleher, R ;
Richter, H ;
Schimmel, T ;
Kalt, H ;
Rosenauer, A ;
Litvinov, D ;
Kamilli, A ;
Gerthsen, D ;
Ohkawa, K ;
Jobst, B ;
Hommel, D .
APPLIED PHYSICS LETTERS, 1999, 75 (25) :3944-3946
[6]  
von Freymann G, 2000, APPL PHYS LETT, V76, P203, DOI 10.1063/1.125720
[7]   Measurements of the absolute external luminescence quantum efficiency in ZnSe/ZnMgSSe multiple quantum wells as a function of temperature [J].
Westphaling, R ;
Ullrich, P ;
Hoffmann, J ;
Kalt, H ;
Klingshirn, C ;
Ohkawa, K ;
Hommel, D .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (12) :6871-6876
1