Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures

被引：11

作者：

Lüerssen, D

Bleher, R

Richter, H

Schimmel, T

Kalt, H

Rosenauer, A

Litvinov, D

Kamilli, A

Gerthsen, D

Ohkawa, K

Jobst, B

Hommel, D

机构：

[1] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany

[2] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany

[3] Univ Bremen, Inst Festkorperphys, D-28334 Bremen, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 25期

关键词：

D O I：

10.1063/1.125502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures are found to induce enhanced radiative recombination visible as pairs of bright spots in microphotoluminescence intensity maps. Structural investigation by atomic-force microscopy and transmission electron microscopy (plan view as well as cross section) reveal that a widening and bending of quantum wells occurs when they are intersected by Frank-type stacking faults. The enlargement of the well width by up to 12 bilayers evokes an efficient localization of excitons. The localizing potential related to Shockley-type stacking-fault pairs is found to be much shallower. (C) 1999 American Institute of Physics. [S0003-6951(99)01551-X].

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页码：3944 / 3946

页数：3

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