STRUCTURAL STUDY OF DEFECTS INDUCED DURING CURRENT INJECTION TO II-VI BLUE-LIGHT EMITTER

被引:67
作者
TOMIYA, S
MORITA, E
UKITA, M
OKUYAMA, H
ITOH, S
NAKANO, K
ISHIBASHI, A
机构
[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama 240, 174, Fujitsuka-cho
关键词
D O I
10.1063/1.113238
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have carried out structural studies of nonluminescent areas developed by current injection in ZnMgSSe alloy-based II-VI blue light emitting diodes by electroluminescence topography and transmission electron microscopy. The nonradiative regions, which spread out in the 〈100〉 direction during current injection, consist of a high density of dislocation dipoles and dislocation loops. The source of these defects is the preexisting stacking faults originating at the substrate/epilayer interface. The dipoles themselves are aligned along both of the 〈110〉 directions lying in the {111} plane. Their Burgers vectors were of the type (a/2)〈011〉 inclined at 45°to the (001) junction plane.© 1995 American Institute of Physics.
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页码:1208 / 1210
页数:3
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