CONTINUOUS-WAVE OPERATION OF 489.9NM BLUE LASER-DIODE AT ROOM-TEMPERATURE

被引：89

作者：

NAKAYAMA, N

ITOH, S

OKUYAMA, H

OZAWA, M

OHATA, T

NAKANO, K

IKEDA, M

ISHIBASHI, A

MORI, Y

机构：

[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama, 240

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 25期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19931474

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

At room temperature (296K), continuous-wave (CW) operation of a blue laser diode has been achieved. The emission wavelength is 489.9nm, and the threshold current and voltage is 93mA (1.5kA/cm2) and 6.3V, respectively. The laser consists of a ZnCdSe/ZnSSe/ZnMgSSe single-quantum-well (SQW) separate-confinement heterostructure (SCH).

引用

页码：2194 / 2195

页数：2

共 7 条

[1] BLUE-GREEN LASER-DIODES [J].

HAASE, MA ;

QIU, J ;

DEPUYDT, JM ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1991, 59 (11) :1272-1274

[2] OHMIC CONTACTS TO P-TYPE ZNSE USING ZNTE/ZNSE MULTIQUANTUM WELLS [J].

HIEI, F ;

IKEDA, M ;

OZAWA, M ;

MIYAJIMA, T ;

ISHIBASHI, A ;

AKIMOTO, K .

ELECTRONICS LETTERS, 1993, 29 (10) :878-879

[3]

ITOH S, 1993, IN PRESS JPN J APPL, V32, pL1530

[4] ROOM-TEMPERATURE CONTINUOUS OPERATION OF BLUE-GREEN LASER-DIODES [J].

NAKAYAMA, N ;

ITOH, S ;

OHATA, T ;

NAKANO, K ;

OKUYAMA, H ;

OZAWA, M ;

ISHIBASHI, A ;

IKEDA, M ;

MORI, Y .

ELECTRONICS LETTERS, 1993, 29 (16) :1488-1489

[5] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

OKUYAMA, H ;

NAKANO, K ;

MIYAJIMA, T ;

AKIMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B) :L1620-L1623

[6] ZNSE/ZNMGSSE BLUE LASER DIODE [J].

OKUYAMA, H ;

MIYAJIMA, T ;

MORINAGA, Y ;

HIEI, F ;

OZAWA, M ;

AKIMOTO, K .

ELECTRONICS LETTERS, 1992, 28 (19) :1798-1799

[7] AU(PT)PD OHMIC CONTACTS TO P-ZNTE [J].

OZAWA, M ;

HIEI, F ;

ISHIBASHI, A ;

AKIMOTO, K .

ELECTRONICS LETTERS, 1993, 29 (05) :503-505

← 1 →