ROOM-TEMPERATURE CONTINUOUS OPERATION OF BLUE-GREEN LASER-DIODES

被引：230

作者：

NAKAYAMA, N

ITOH, S

OHATA, T

NAKANO, K

OKUYAMA, H

OZAWA, M

ISHIBASHI, A

IKEDA, M

MORI, Y

机构：

[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama 240

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 16期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19930994

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Continuous-wave operation in wide-pp II-VI semiconductor current injection laser diodes at room temperature has been demonstrated for the first time. Stimulated emission was observed at a wavelength of 523.5 nm with a threshold current of 45 mA (1.4 kA/cm2) from ZnCdSe/ZnSe/ZnMgSSe single-quantum-well (SQW) separate-confinement hetero-structure (SCH) laser diodes.

引用

页码：1488 / 1489

页数：2

共 6 条

[1] BLUE-GREEN INJECTION-LASERS CONTAINING PSEUDOMORPHIC ZN1-XMGXSYSE1-Y CLADDING LAYERS AND OPERATING UP TO 394-K
GAINES, JM
DRENTEN, RR
HABERERN, KW
MARSHALL, T
MENSZ, P
PETRUZZELLO, J
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (20) : 2462 - 2464
[2] BLUE-GREEN LASER-DIODES
HAASE, MA
QIU, J
DEPUYDT, JM
CHENG, H
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (11) : 1272 - 1274
[3] ROOM-TEMPERATURE PULSED OPERATION OF 498NM LASER WITH ZNMGSSE CLADDING LAYERS
ITOH, S
OKUYAMA, H
MATSUMOTO, S
NAKAYAMA, N
OHATA, T
MIYAJIMA, T
ISHIBASHI, A
AKIMOTO, K
[J]. ELECTRONICS LETTERS, 1993, 29 (09) : 766 - 768
[4] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY
OKUYAMA, H
NAKANO, K
MIYAJIMA, T
AKIMOTO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B): : L1620 - L1623
[5] ZNSE/ZNMGSSE BLUE LASER DIODE
OKUYAMA, H
MIYAJIMA, T
MORINAGA, Y
HIEI, F
OZAWA, M
AKIMOTO, K
[J]. ELECTRONICS LETTERS, 1992, 28 (19) : 1798 - 1799
[6] AU(PT)PD OHMIC CONTACTS TO P-ZNTE
OZAWA, M
HIEI, F
ISHIBASHI, A
AKIMOTO, K
[J]. ELECTRONICS LETTERS, 1993, 29 (05) : 503 - 505

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