ROOM-TEMPERATURE PULSED OPERATION OF 498NM LASER WITH ZNMGSSE CLADDING LAYERS

被引：46

作者：

ITOH, S

OKUYAMA, H

MATSUMOTO, S

NAKAYAMA, N

OHATA, T

MIYAJIMA, T

ISHIBASHI, A

AKIMOTO, K

机构：

[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama 240

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 09期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19930513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature pulsed operation of ZnCdSe/ZnSe/ZnMgSSe SCH lasers has been achieved. Blue-green stimulated emission is observed at a wavelength of 498.5 nm. The threshold current density is 2-8 kA/cm2 for the diode made by molecular beam epitaxy.

引用

页码：766 / 768

页数：3

共 10 条

[1] DRENTEN RR, 1993, THERMAL CHARACTERISA
[2] GRADED BAND-GAP OHMIC CONTACT TO P-ZNSE
FAN, Y
HAN, J
HE, L
SARAIE, J
GUNSHOR, RL
HAGEROTT, M
JEON, H
NURMIKKO, AV
HUA, GC
OTSUKA, N
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (26) : 3160 - 3162
[3] BLUE-GREEN LASER-DIODES
HAASE, MA
QIU, J
DEPUYDT, JM
CHENG, H
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (11) : 1272 - 1274
[4] ITOH S, 1992, JPN J APPL PHYS, V31, pL1316
[5] IMPROVED OHMIC CONTACTS FOR P-TYPE ZNSE AND RELATED P-ON-N DIODE STRUCTURES
LANSARI, Y
REN, J
SNEED, B
BOWERS, KA
COOK, JW
SCHETZINA, JF
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (21) : 2554 - 2556
[6] NURMIKKO AV, 1992, 1992 INT C SOL STAT, P342
[7] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY
OKUYAMA, H
NAKANO, K
MIYAJIMA, T
AKIMOTO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B): : L1620 - L1623
[8] ZNSE/ZNMGSSE BLUE LASER DIODE
OKUYAMA, H
MIYAJIMA, T
MORINAGA, Y
HIEI, F
OZAWA, M
AKIMOTO, K
[J]. ELECTRONICS LETTERS, 1992, 28 (19) : 1798 - 1799
[9] AU(PT)PD OHMIC CONTACTS TO P-ZNTE
OZAWA, M
HIEI, F
ISHIBASHI, A
AKIMOTO, K
[J]. ELECTRONICS LETTERS, 1993, 29 (05) : 503 - 505
[10] WALKER CT, 1992, 7TH TRIEST SEM S TRI

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