Non-langevin recombination in disordered materials with random potential distributions

被引：70

作者：

Adriaenssens, GJ

Arkhipov, VI

机构：

[1] Laboratorium voor Halfgeleiderfysica, Katholieke Universiteit Leuven, B-3001 Heverlee-Leuven

[2] Moscow Engineering Physics Institute, Moscow 115409

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 103卷 / 09期

关键词：

disordered systems; semiconductors; electronic states (localized); recombination and trapping;

D O I：

10.1016/S0038-1098(97)00233-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A concept of random spatial fluctuations in the potential landscape of disordered semiconductors is employed to explain the effect of suppressed charge carrier recombination in these materials. The rate of bimolecular recombination is shown to be anomalously low due to spatial separation of electrons and holes in the fluctuating potential landscape. Photoexcited carriers can avoid geminate recombination due to the effect of a sufficiently strong local electric field coupled to the potential fluctuations. (C) 1997 Elsevier Science Ltd.

引用

页码：541 / 543

页数：3

共 13 条

[1] SIGN-ALTERNATING KINETICS OF RADIATION-INDUCED CURRENT IN DISORDERED DIELECTRICS [J].