Anodic corrosion of indium tin oxide films induced by the electrochemical oxidation of chlorides

被引:61
作者
Folcher, G [1 ]
Cachet, H [1 ]
Froment, M [1 ]
Bruneaux, J [1 ]
机构
[1] UNIV PARIS 06,UPR 15,CNRS,F-75252 PARIS 05,FRANCE
关键词
corrosion; electrochemistry; halogens; indium oxide;
D O I
10.1016/S0040-6090(97)00024-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Conducting tin-doped indium oxide (ITO) films were prepared by spray pyrolysis for study of their electrochemical stability as anodes in chloride solutions. From reflection high energy electron diffraction and transmission electron microscopy observations, ITO films present a regular polycrystalline structure with a very low density of twins. Corrosion was investigated by in situ mass measurements with a quartz crystal microbalance (QCM) and by direct imaging of corrosion morphology with scanning (SEM) and transmission (TEM) electron microscopy. Corrosion was found to occur at potentials positive of chloride oxidation (0.9 V vs. saturated calomel electrode (SCE)) as long as oxygen is not evolved (V < 1.3 V(SCE)). The corrosion rate is very low in the presence of 0.04 M HCl at pH 8 (less than or equal to 5 ngs(-1) cm(-2)), and very large in acidic HCl solutions (3400 ngs(-1) cm(-2) in 0.1 M HCl). TEM images of corroded ITO membranes reveal an important intergranular attack. The corrosion mechanism is based on the electrochemical formation of Cl degrees and OH degrees radical species able to withdraw electrons from In-O surface bonds.
引用
收藏
页码:242 / 248
页数:7
相关论文
共 26 条
[1]  
[Anonymous], 1985, STANDARD POTENTIALS
[2]   ELECTROCHEMICAL PATTERNING OF TIN OXIDE-FILMS [J].
BALIGA, BJ ;
GHANDHI, SK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1059-1060
[3]  
BISHIOU, 1993, THIN SOLID FILMS, V229, P146
[4]  
BRUNEAUX J, 1994, ELECTROCHIM ACTA, V39, P1459
[5]   Corrosion of tin oxide at anodic potentials [J].
Cachet, H ;
Froment, M ;
Zenia, F .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (02) :442-448
[6]  
COMNINELLIS C, 1995, J APPL ELECTROCHEM, V25, P23
[7]   Physicochemical properties of SnO2-Sb2O5 films prepared by the spray pyrolysis technique [J].
CorreaLozano, B ;
Comninellis, C ;
DeBattisti, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (01) :203-209
[8]   FORMULATION OF A STATISTICAL THERMODYNAMIC MODEL FOR THE ELECTRON-CONCENTRATION IN HEAVILY DOPED METAL-OXIDE SEMICONDUCTORS APPLIED TO THE TIN-DOPED INDIUM OXIDE SYSTEM [J].
ELFALLAL, I ;
PILKINGTON, RD ;
HILL, AE .
THIN SOLID FILMS, 1993, 223 (02) :303-310
[9]   ELECTRICAL-PROPERTIES AND DEFECT MODEL OF TIN-DOPED INDIUM OXIDE LAYERS [J].
FRANK, G ;
KOSTLIN, H .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (04) :197-206
[10]  
GERISCHER H, 1979, TOPICS APPLIED PHYSI, pCH4