Photoelectron diffraction study of the structures of silicon surfaces

被引：6

作者：

Kono, S ^{[1
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2002年 / 126卷 / 1-3期

关键词：

photoelectron diffraction; silicon surfaces; X-ray photoelectron diffraction; Auger electron diffraction;

D O I：

10.1016/S0368-2048(02)00142-1

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The author witnessed the dawn of X-ray photoelectron diffraction with Chuck Fadley and has applied photoelectron diffraction to solid surfaces, particularly Si surfaces and submonolayer interfaces with it. In this article, the author reviews mainly his own photoelectron diffraction studies of silicon surfaces in an attempt to define the characteristics, roles and prospects of photoelectron diffraction, Auger electron diffraction and related diffraction techniques in general. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：43 / 53

页数：11

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