Fabrication of submicron-scale SrTiO3-δ devices by an atomic force microscope

被引：79

作者：

Pellegrino, L ^{[1
]}

Pallecchi, I ^{[1
]}

Marré, D ^{[1
]}

Bellingeri, E ^{[1
]}

Siri, AS ^{[1
]}

机构：

[1] INFM, LAMIA, Dipartimento Fis, I-16146 Genoa, Italy

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 20期

关键词：

D O I：

10.1063/1.1521583

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By applying a negative voltage to the conducting tip of an atomic force microscope, we modify on submicron-scale semiconducting oxygen deficient SrTiO3-delta thin films grown on LaAlO3 substrates. In comparison with the as-grown film, the modified regions present different electrical and structural properties, which can be exploited to realize submicrometer circuits. After a discussion on the mechanisms of the process, we report a prototype of a SrTiO3-delta-based sidegate field-effect transistor, showing a 4% modulation of channel resistivity with gate voltages up to 40 V. (C) 2002 American Institute of Physics.

引用

收藏

页码：3849 / 3851

页数：3

相关论文

共 28 条

[1] Field induced oxidation of silicon by SPM: study of the mechanism at negative sample voltage by STM, ESTM and AFM [J].

Abadal, G ;

Perez-Murano, F ;

Barniol, N ;

Aymerich, X .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1) :S791-S795

[2] Atomic force microscope tip-induced local oxidation of silicon: Kinetics, mechanism, and nanofabrication [J].

Avouris, P ;

Hertel, T ;

Martel, R .

APPLIED PHYSICS LETTERS, 1997, 71 (02) :285-287

[3] Modification of YBa2Cu3O7-δ wires using a scanning tunneling microscope:: Process and electrical transport effects [J].

Bertsche, G ;

Clauss, W ;

Prins, FE ;

Kern, DP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3883-3886

[4] Nanometer-scale surface modifications of YBa2Cu3O7-delta thin films using a scanning tunneling microscope [J].

Bertsche, G ;

Clauss, W ;

Kern, DP .

APPLIED PHYSICS LETTERS, 1996, 68 (25) :3632-3634

[5] AFM induced formation of SiO2 structures in the electrochemical nanocell [J].

Bloess, H ;

Staikov, G ;

Schultze, JW .

ELECTROCHIMICA ACTA, 2001, 47 (1-2) :335-344

[6] Josephson junctions and superconducting quantum interference devices made by local oxidation of niobium ultrathin films [J].

Bouchiat, V ;

Faucher, M ;

Thirion, C ;

Wernsdorfer, W ;

Fournier, T ;

Pannetier, B .

APPLIED PHYSICS LETTERS, 2001, 79 (01) :123-125

[7] FABRICATION OF NANOMETER-SCALE SIDE-GATED SILICON FIELD-EFFECT TRANSISTORS WITH AN ATOMIC-FORCE MICROSCOPE [J].

CAMPBELL, PM ;

SNOW, ES ;

MCMARR, PJ .

APPLIED PHYSICS LETTERS, 1995, 66 (11) :1388-1390

[8] MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].

DAGATA, JA ;

SCHNEIR, J ;

HARARY, HH ;

EVANS, CJ ;

POSTEK, MT ;

BENNETT, J .

APPLIED PHYSICS LETTERS, 1990, 56 (20) :2001-2003

[9] High dielectric constant and tunability of epitaxial SrTiO3 thin film capacitors [J].

Fuchs, D ;

Schneider, CW ;

Schneider, R ;

Rietschel, H .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (10) :7362-7369

[10] Energy spectra of quantum rings [J].

Fuhrer, A ;

Lüescher, S ;

Ihn, T ;

Heinzel, T ;

Ensslin, K ;

Wegscheider, W ;

Bichler, M .

NATURE, 2001, 413 (6858) :822-825