Electron and ion energy controls in a radio frequency discharge plasma with silane

被引：24

作者：

Kato, K ^{[1
]}

Iizuka, S ^{[1
]}

Ganguly, G ^{[1
]}

Ikeda, T ^{[1
]}

Matsuda, A ^{[1
]}

Sato, N ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 7B期

关键词：

rf silane plasma; grid-bias method; electron and ion temperature control; hydrogenated amorphous silicon; hole drift mobility;

D O I：

10.1143/JJAP.36.4547

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron and ion energy distribution functions are controlled in a radio-frequency (rf) discharge plasma with silane for production of hydrogenated amorphous silicon films. We apply the grid-bias method to an rf silane plasma in order to obtain a low electron-temperature (T-e similar or equal to 0.2eV) and low ion-temperature (T-i similar or equal to 0.1eV) plasma. The ion beam energy is controlled by biasing the substrate. We find that the room temperature hole drift mobility is increased by two orders of magnitude compared to the conventional value at an ion beam energy between 23 eV and 24 eV.

引用

页码：4547 / 4550

页数：4

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