Lateral grain size and electron mobility in ZnO epitaxial films grown on sapphire substrates

被引：56

作者：

Ohtomo, A

Kimura, H

Saito, K

Makino, T

Segawa, Y

Koinuma, H

Kawasaki, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Yokohama, Kanagawa 2278502, Japan

[2] Philips Applicat Lab, Minato Ku, Tokyo 1088507, Japan

[3] RIKEN, Photodynam Res Ctr, Sendai, Miyagi 9800868, Japan

[4] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

[5] Japan Sci & Technol Corp, CREST, Shinjuku Ku, Tokyo 1690072, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

基金：

日本学术振兴会;

关键词：

ZnO films; laser molecular-beam epitaxy; lateral grain size; mosaicness; electron mobility; X-ray reciprocal space mapping;

D O I：

10.1016/S0022-0248(00)00093-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have fabricated ZnO thin films on sapphire substrates at temperatures ranging from 350 to 1000 degrees C by laser molecular-beam epitaxy. With increasing growth temperature, lateral grain size evaluated by X-ray reciprocal space mapping increased resulting in improved electron mobility. When the film was grown at 1000 degrees C, an electron mobility as large as 90 cm(2)/Vs was achieved. By annealing in 1 atm of oxygen at 1000 degrees C, thin films having much larger grain size (> 5 mu m(2)) and higher mobility(similar to 120 cm(2)/V s) comparable with those for bulk single crystals could be obtained. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：284 / 288

页数：5

共 9 条

[1] CARRIER TRANSPORT THROUGH GRAIN-BOUNDARIES IN SEMICONDUCTORS [J].

BLATTER, G ;

GREUTER, F .

PHYSICAL REVIEW B, 1986, 33 (06) :3952-3966

[2]

Fewster PF, 1996, NATO ADV SCI I B-PHY, V357, P269

[3] Excitonic ultraviolet laser emission at room temperature from naturally made cavity in ZnO nanocrystal thin films [J].

Kawasaki, M ;

Ohtomo, A ;

Ohkubo, I ;

Koinuma, H ;

Tang, ZK ;

Yu, P ;

Wong, GKL ;

Zhang, BP ;

Segawa, Y .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 56 (2-3) :239-245

[4]

KOINUMA H, 1997, MATER RES SOC S P, V474, P303

[5] Residual native shallow donor in ZnO [J].

Look, DC ;

Hemsky, JW ;

Sizelove, JR .

PHYSICAL REVIEW LETTERS, 1999, 82 (12) :2552-2555

[6] Room temperature ultraviolet laser emission from ZnO nanocrystal thin films grown by laser MBE [J].

Ohtomo, A ;

Kawasaki, M ;

Sakurai, Y ;

Yoshida, Y ;

Koinuma, H ;

Yu, P ;

Tang, ZK ;

Wong, GKL ;

Segawa, Y .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 54 (1-2) :24-28

[7] Single crystalline ZnO films grown on lattice-matched ScAlMgO4(0001) substrates [J].

Ohtomo, A ;

Tamura, K ;

Saikusa, K ;

Takahashi, K ;

Makino, T ;

Segawa, Y ;

Koinuma, H ;

Kawasaki, M .

APPLIED PHYSICS LETTERS, 1999, 75 (17) :2635-2637

[8] Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films [J].

Tang, ZK ;

Wong, GKL ;

Yu, P ;

Kawasaki, M ;

Ohtomo, A ;

Koinuma, H ;

Segawa, Y .

APPLIED PHYSICS LETTERS, 1998, 72 (25) :3270-3272

[9]

Yu P, 1998, J CRYST GROWTH, V184, P601, DOI 10.1016/S0022-0248(98)80126-7

← 1 →