Graphitization of Fe-doped amorphous carbon pillars grown by focused-ion-beam-induced chemical-vapor deposition

被引:35
作者
Fujita, J
Ishida, M
Ichihashi, T
Ochiai, Y
Kaito, T
Matsui, S
机构
[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
[2] Seiko Instruments Inc, Oyama, Shizuoka 4101939, Japan
[3] Himeji Inst Technol, Akogun, Hyogo 6781201, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 06期
关键词
D O I
10.1116/1.1518022
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Graphitization of amorphous carbon pillar grown by focused-ion-beam-induced chemical-vapor deposition was demonstrated using an iron catalyst. The graphitization was induced by iron particles at the top of the pillar that were locally doped. Such graphitization of amorphous carbon seems to be based on solid phase crystallization, where homo-epitaxial growth on a graphite template appeared to have occurred. The original three-dimensional shape of an as-grown structure survived solid phase graphitization at 820 degreesC. (C) 2002 American Vacuum Society.
引用
收藏
页码:2686 / 2689
页数:4
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