Optimization of ZnSe/ZnTe superlattice structured p-contact for ZnSe-based optical devices

被引：9

作者：

Abe, T ^{[1
]}

Ishikura, H ^{[1
]}

Saomoto, Y ^{[1
]}

Goto, K ^{[1
]}

Masuda, K ^{[1
]}

Shirai, T ^{[1
]}

Yamada, H ^{[1
]}

Kuroda, S ^{[1
]}

Kasada, H ^{[1
]}

Ando, K ^{[1
]}

机构：

[1] Tottori Univ, Fac Engn, Elect & Elect Dept, Tottori 6808552, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷 / 214期

关键词：

ZnSe/ZnTe MQW; superlattice electrode; p-type contact; resonant tunneling; finite element method; MBE;

D O I：

10.1016/S0022-0248(00)00137-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have optimized the structure of ZnSe/ZnTe superlattice electrode by comparison between experimental characteristics and theoretical calculations. Quantum levels in ZnSe/ZnTe superlattice and tunneling carrier densities are evaluated by using finite element method and transfer matrix method, respectively. It is found that important parameters for the design of the superlattice electrode are (a) high ground quantum level of hole, and (b) large tunneling carrier density. A new optimum structure with very high tunneling current density is proposed. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：492 / 496

页数：5

共 9 条

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