Tbit/inch2 ferroelectric data storage based on scanning nonlinear dielectric microscopy

被引：163

作者：

Cho, YS

Fujimoto, K

Hiranaga, Y

Wagatsuma, Y

Onoe, A

Terabe, K

Kitamura, K

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Pioneer Corp, R&D Labs, Tsurugashima 3502288, Japan

[3] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 23期

关键词：

D O I：

10.1063/1.1526916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanosized inverted domain dots in ferroelectric materials have potential applications in ultrahigh-density rewritable data storage systems. Here, a data storage system based on scanning nonlinear dielectric microscopy and thin films of ferroelectric single-crystal lithium tantalite is presented. Through domain engineering, nanosized inverted domain dots have been successfully formed at a data density of 1.50 Tbit/in.(2). (C) 2002 American Institute of Physics.

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收藏

页码：4401 / 4403

页数：3

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