Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams

被引：8

作者：

Afanas'ev, V. V. ^{[1
]}

Stesmans, A. ^{[1
]}

Delabie, A. ^{[2
]}

Bellenger, F. ^{[2
]}

Houssa, M. ^{[2
]}

Lieten, R. R. ^{[2
]}

Merckling, C. ^{[2
]}

Penaud, J. ^{[2
]}

Brunco, D. P. ^{[2
]}

Meuris, M. ^{[2
]}

机构：

[1] Univ Louvain, Dept Phys & Astron, B-3001 Louvain, Belgium

[2] IMEC, B-3001 Louvain, Belgium

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2008年 / 11卷 / 5-6期

关键词：

Germanium; Interface barrier; Internal photoemission; Photoconductivity;

D O I：

10.1016/j.mssp.2008.09.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The energy band alignment between Ge, HfO2 and Al2O3 was analyzed as influenced by passivating interlayers (ILs) of different composition (GeO2, Ge3N4, Si/SiOx). From internal photoemission and photoconductivity experiments we found no IL-sensitive dipoles at the Ge/HfO2 interfaces, the latter being universally characterized by conduction and valence band offsets of 2.1 and 3.0 eV, respectively. However, in the case of HfO2 growth using H2O-based atomic layer deposition, the Ge oxide IL appears to have a narrower bandgap, 4.3 eV, than the 5.4-5.9 eV gap of bulk germania. Accordingly, formation of this IL yields significantly reduced barriers for hole and, particularly, electron injection from Ge into the insulator. Changing to a H-free process for HfO2 and Al2O3 deposition suppresses the formation of the narrow-gap Ge oxide. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：230 / 235

页数：6

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