On effective electron mass of silicon field structures at low electron densities

被引：24

作者：

Dolgopolov, VT ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Region, Russia

来源：

JETP LETTERS | 2002年 / 76卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1525041

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The trial wave function method developed in [10, 11] for the case of a narrow s band in a perfect crystal is adapted for the calculation of the concentration dependence of the effective mass and the Lande factor in a two-dimensional electron system of low density. It has been found that the effective mass has a tendency to divergence at a certain critical concentration, whereas the g factor remains finite. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：377 / 379

页数：3

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