Pressure induced metal-insulator transition of selenospinel CuIr2Se4

被引：30

作者：

Furubayashi, T

Kosaka, T

Tang, J

Matsumoto, T

Kato, Y

Nagata, S

机构：

[1] UNIV TSUKUBA, INST MAT SCI, TSUKUBA, IBARAKI 305, JAPAN

[2] MURORAN INST TECHNOL, DEPT MAT SCI & ENGN, MURORAN, HOKKAIDO 050, JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1997年 / 66卷 / 05期

关键词：

metal-insulator transition; electrical resistance; high pressure; chalcogenide spinel; CuIr2Se4;

D O I：

10.1143/JPSJ.66.1563

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1563 / 1564

页数：2

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