Radiation damage and implanted He atom interaction during void formation in silicon

被引：29

作者：

Raineri, V ^{[1
]}

Saggio, M ^{[1
]}

机构：

[1] ST MICROELECT,I-95121 CATANIA,ITALY

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 12期

关键词：

D O I：

10.1063/1.119330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

He was implanted in silicon wafers to several doses (5x10(15)-4x10(16) cm(-2)) at different temperatures (from -196 up to 400 degrees C). Void formation and evolution was observed by cross-sectional and plan view transmission electron microscopy analyses. We observed that void density and morphology are strictly related to substrate temperature during He implantation. Experiments show that for substrate temperature between 10 and 90 degrees C or higher than 150 degrees C, void formation is inhibited; when voids are observed, a few degrees of difference significantly change their density. The results can be interpreted by considering the interaction between He and the radiation damage produced during He implantation that forms stable bubbles. (C) 1997 American Institute of Physics.

引用

页码：1673 / 1675

页数：3

共 16 条

[1] 1ST-PRINCIPLES STUDY OF HE IN SI [J].