The integration of III-V optoelectronics with silicon circuitry

被引：72

作者：

Mathine, DL

机构：

[1] Optical Sciences Center, University of Arizona, Tucson

[2] University of Nebraska, Lincoln, NE

[3] Purdue University, West Lafayette, IN

[4] Optical Sciences Center, University of Arizona

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1997年 / 3卷 / 03期

基金：

美国国家科学基金会;

关键词：

CMOS integrated circuits; hybrid integrated circuit fabrication; integrated optoelectronics; MESFET's; optical interconnects; photodetectors; semiconductor device fabrication; surface-emitting lasers;

D O I：

10.1109/2944.640649

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The integration of III-V optoelectronics with silicon circuitry provides the potential for fabricating dense parallel optical interconnects with data links capable of Terabit aggregate data rates. This paper reviews many of the current approaches used for the fabrication of integrated optoelectronic devices and then highlights the performance results. Lastly, the applique method is reviewed in greater detail with recent results on VCSEL, MESFET,and photodiode integration presented.

引用

收藏

页码：952 / 959

页数：8

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