MONOLITHIC INTEGRATION OF GAAS/ALGAAS LED AND SI DRIVER CIRCUIT

[1] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817

[2] MONOLITHIC INTEGRATION OF SI MOSFETS AND GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 241 - 243

[3] MONOLITHIC INTEGRATION OF GAAS/ALGAAS DOUBLE-HETEROSTRUCTURE LEDS AND SI MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 500 - 502

[4] EFFECTIVENESS OF STRAINED-LAYER SUPERLATTICES IN REDUCING DEFECTS IN GAAS EPILAYERS GROWN ON SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1608 - 1610

[5] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33

[6] LEE JW, 1987, I PHYS C SER, V83, P111

[7] SAKAI S, 1986, MATER RES SOC S P, V67, P15

[8] TSAUR BY, 1982, 16TH P IEEE PHOT SPE, P1143

[1] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817

[2] MONOLITHIC INTEGRATION OF SI MOSFETS AND GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 241 - 243

[3] MONOLITHIC INTEGRATION OF GAAS/ALGAAS DOUBLE-HETEROSTRUCTURE LEDS AND SI MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 500 - 502

[4] EFFECTIVENESS OF STRAINED-LAYER SUPERLATTICES IN REDUCING DEFECTS IN GAAS EPILAYERS GROWN ON SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1608 - 1610

[5] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33

[6] LEE JW, 1987, I PHYS C SER, V83, P111

[7] SAKAI S, 1986, MATER RES SOC S P, V67, P15

[8] TSAUR BY, 1982, 16TH P IEEE PHOT SPE, P1143