Tunable Dirac cone in the topological insulator Bi2-xSbxTe3-ySey

被引：317

作者：

Arakane, T. ^{[2
]}

Sato, T. ^{[1
]}

Souma, S. ^{[2
]}

Kosaka, K. ^{[1
]}

Nakayama, K. ^{[1
]}

Komatsu, M. ^{[1
]}

Takahashi, T. ^{[1
,2
]}

Ren, Zhi ^{[3
]}

Segawa, Kouji ^{[3
]}

Ando, Yoichi ^{[3
]}

机构：

[1] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan

[2] Tohoku Univ, Adv Inst Mat Res, WPI Res Ctr, Sendai, Miyagi 9808577, Japan

[3] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

NATURE COMMUNICATIONS | 2012年 / 3卷

关键词：

SURFACE-STATES;

D O I：

10.1038/ncomms1639

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The three-dimensional topological insulator is a quantum state of matter characterized by an insulating bulk state and gapless Dirac cone surface states. Device applications of topological insulators require a highly insulating bulk and tunable Dirac carriers, which has so far been difficult to achieve. Here we demonstrate that Bi2-xSbxTe3-ySey is a system that simultaneously satisfies both of these requirements. For a series of compositions presenting bulk-insulating transport behaviour, angle-resolved photoemission spectroscopy reveals that the chemical potential is always located in the bulk band gap, whereas the Dirac cone dispersion changes systematically so that the Dirac point moves up in energy with increasing x, leading to a sign change of the Dirac carriers at x similar to 0.9. Such a tunable Dirac cone opens a promising pathway to the development of novel devices based on topological insulators.

引用

页数：5

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