Core polarization in solids: Formulation and application to semiconductors

被引:56
作者
Shirley, EL
Zhu, XJ
Louie, SG
机构
[1] UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
[2] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB, DIV MAT SCI, BERKELEY, CA 94720 USA
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 11期
关键词
D O I
10.1103/PhysRevB.56.6648
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Accurate treatment of exchange and correlation effects involving core and valence electrons can he surprisingly important in solid-state calculations, especially for solids having elements with shallow core electrons, such as Ga and Ge. A local-density-approximation treatment of core-valence interactions leads to errors of similar to 0.4 eV for key features in the band structures of Ge and GaAs, even when valence-valence interactions are treated in a first-principles, quasiparticle approach. We apply a core-polarization-potential treatment of corevalence interactions within the framework of such quasiparticle calculations. Final results have errors of similar to 0.1 eV in band-energy differences.
引用
收藏
页码:6648 / 6661
页数:14
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