High-Mobility Ambipolar Transistors and High-Gain Inverters from a Donor-Acceptor Copolymer Semiconductor

被引：287

作者：

Kim, Felix Sunjoo ^{[1
,2
]}

Guo, Xugang ^{[3
]}

Watson, Mark D. ^{[3
]}

Jenekhe, Samson A. ^{[1
,2
]}

机构：

[1] Univ Washington, Dept Chem Engn, Seattle, WA 98195 USA

[2] Univ Washington, Dept Chem, Seattle, WA 98195 USA

[3] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 04期

基金：

美国国家科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; N-CHANNEL; CONJUGATED POLYMERS; CHARGE-TRANSPORT; ELECTRON; CIRCUITS; BEHAVIOR; BLENDS; GATE;

D O I：

10.1002/adma.200901819

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-performance ambipolar transistors and inverters are demonstrated using a new donor-acceptor copolymer semiconductor. The ambipolar transistors show electron and hole mobilities of up to 0.04 and 0.003 cm(2) V-1 s(-1), respectively. Voltage transfer curves of the inverters made on common gold electrodes showed sharp switching with a gain of 30.

引用

页码：478 / +

页数：6

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