Nucleationless three-dimensional island formation in low-misfit heteroepitaxy

被引:183
作者
Sutter, P [1 ]
Lagally, MG
机构
[1] Univ Wisconsin, Madison, WI 53706 USA
[2] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA
关键词
D O I
10.1103/PhysRevLett.84.4637
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The formation of faceted three-dimensional islands during growth of low-misfit Si1-xGex alloys on Si(100) has been investigated by low-energy electron microscopy. The formation of the islands in these alloy systems does not involve three-dimensional nucleation, but rather proceeds via a precursor array of shallow, stepped mounds on the surface that result from the inherent morphological instability of the strained alloy film.
引用
收藏
页码:4637 / 4640
页数:4
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