A periodic array of silicon pillars fabricated by photoelectrochemical etching

被引：25

作者：

Li, Xiaopeng ^{[1
]}

Seo, Hong-Seok ^{[1
]}

Um, Han-Don ^{[1
]}

Jee, Sang-Won ^{[1
]}

Cho, YongWoo ^{[1
]}

Yoo, Bongyoung ^{[1
]}

Lee, Jung-Ho ^{[1
]}

机构：

[1] Hanyang Univ, Div Mat & Chem Engn, Ansan 426791, Kyounggi Do, South Korea

来源：

ELECTROCHIMICA ACTA | 2009年 / 54卷 / 27期

关键词：

Photoelectrochemical etching; Silicon pillar array; Pore separation; Macroporous silicon; KOH post-etching; ALKALINE-SOLUTIONS; MECHANISM; PORE;

D O I：

10.1016/j.electacta.2009.06.094

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A periodic array of silicon pillars was photoelectrochemically fabricated using the two-step etching process with a n-type Si (1 0 0) substrate. Two key factors, backside illumination and anodic bias, were required to obtain a high-aspect ratio macropore array of silicon. It was found that the initial pore could be separated into two different pores when the applied anodic bias was greater than a certain critical value. The pore size of the macroporous silicon with a high porosity was increased by anisotropic etching in an alkaline solution. Due to destruction of the pore sidewalls, KOH etching allowed for the fabrication of silicon pillars on a large-scale wafer with an improved uniformity. The anisotropic etching behavior of KOH solution led to necking of the silicon pillars when the etching time exceeded 60 s. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：6978 / 6982

页数：5

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