Fabrication and characterization of CdZnTe radiation detectors with a new P-I-N design

We report on the design, fabrication, and performance of CdZnTe gamma-ray detectors with a new P-I-N structure for spectroscopic applications. High-pressure and conventional vertical-Bridgman CdZnTe crystals were used for detector fabrication. P and n layers were deposited by thermal evaporation, and by optimizing the deposition conditions we achieved low leakage current (approximately 15 nA at 1000 V) and good performance. Spectral response data at high bias voltages showed improved energy resolution and peak-to-valley ratios for Am-241 and Co-57 compared to metal-semiconductor-metal detectors.