High-performance transistor based on individual single-crystalline micrometer wire of perylo[1,12-b,c,d]thiophene

被引：136

作者：

Sun, Yanming

Tan, Lin

Jiang, Shidong

Qian, Hualei

Wang, Zhaohui ^{[1
]}

Yan, Dongwei

Di, Chongan

Wang, Ying

Wu, Weiping

Yu, Gui

Yan, Shouke

Wang, Chunru

Hu, Wenping

Liu, Yunqi

Zhu, Daoben

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, State Key Lab Polymer Phys & Chem, Inst Chem, Beijing 100080, Peoples R China

[3] Chinese Acad Sci, Key Lab Mol Nanostruct & Nanotechnol, Inst Chem, Beijing 100080, Peoples R China

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2007年 / 129卷 / 07期

关键词：

D O I：

10.1021/ja068079g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have first investigated the thin-film field-effect behavior of perylo[1,12-b,c,d]thiophene by vacuum evaporation technique, which exhibits a moderate mobility of 0.05 cm(2) V-1 s(-1), an on/off ratio of 10(5), and a low threshold voltage of -6.3 V at room temperature. Moreover, we have grown its single-crystalline micrometer wires and successfully applied them to transistors. A high mobility up to 0.8 cm(2) V-1 s(-1) has been achieved. The extraordinary solid-state packing arrangement with the likelihood of double-channel fashion induced by marked S center dot center dot center dot S interactions may contribute to the high performance.

引用

页码：1882 / +

页数：3

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