Mapping of Local Electrical Properties in Epitaxial Graphene Using Electrostatic Force Microscopy

被引：78

作者：

Burnett, Tim ^{[1
]}

Yakimova, Rositza ^{[2
]}

Kazakova, Olga ^{[1
]}

机构：

[1] Natl Phys Lab, Teddington TW11 0LW, Middx, England

[2] Linkoping Univ, SE-58183 Linkoping, Sweden

来源：

NANO LETTERS | 2011年 / 11卷 / 06期

关键词：

Epitaxial graphene; electrostatic force microscopy; phase contrast; surface potential;

D O I：

10.1021/nl200581g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Local electrical characterization of epitaxial graphene grown on 4H-SiC (0001) using electrostatic force microscopy (EFM) in ambient conditions and at elevated temperatures is presented. EFM provides a straightforward identification of graphene with different numbers of layers on the substrate where topographical determination is hindered by adsorbates. Novel EFM spectroscopy has been developed measuring the EFM phase as a function of the electrical DC bias, establishing a rigorous way to distinguish graphene domains and facilitating optimization of EFM imaging.

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页码：2324 / 2328

页数：5

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