Local work function measurements of epitaxial graphene

被引：203

作者：

Filleter, T. ^{[1
]}

Emtsev, K. V. ^{[2
]}

Seyller, Th. ^{[2
]}

Bennewitz, R. ^{[1
,3
]}

机构：

[1] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada

[2] Univ Erlangen Nurnberg, Lehrstuhl Tech Phys, D-91058 Erlangen, Germany

[3] INM Leibniz Inst New Mat, D-66123 Saarbrucken, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 13期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1063/1.2993341

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The work function difference between single layer and bilayer graphene grown epitaxially on 6H-SiC(0001) has been determined to be 135 +/- 9 meV by means of the Kelvin probe force microscopy. Bilayer films are found to increase the work function as compared to single layer films. This method allows an unambiguous distinction between interface layer, single layer, and bilayer graphene. In combination with high-resolution topographic imaging, the complex step structure of epitaxial graphene on SiC can be resolved with respect to substrate and graphene layer steps. (C) 2008 American Institute of Physics.

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页数：3

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