Design and fabrication of a high-dynamic-range image sensor in TFA technology

被引:36
作者
Lulé, T [1 ]
Schneider, B
Böhm, M
机构
[1] Silicon Vis GmbH, D-57078 Siegen, Germany
[2] Univ Gesamthsch Siegen, Inst Semicond Elect, D-57068 Siegen, Germany
关键词
D O I
10.1109/4.760382
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Image sensors in thin film on ASIC (TFA) technology are composed of amorphous silicon (a-Si:H) thin-film detectors on top of crystalline ASIC's. With regard to advanced imaging systems, TFA provides enhanced performance and more flexibility than conventional technologies. Extensive an-chip signal processing is feasible, as well as small pixels for high-resolution imagers. Several prototypes of TPA sensors have been developed, optimized for considerably different applications. This paper focuses on a TFA sensor for automotive vision systems that allows each pixel to adapt its individual sensitivity to the local illumination intensity. By this means, a dynamic range of 120-dB minimum along with high local contrast is achieved. The recent second prototype array consists of 368 x 256 pixels with an area of 40 x 38 mu m(2) each. The ASIC's were fabricated in a 0.7-mu m CMOS technology, whereupon the a-Si:H thin film was deposited in a plasma-enhanced chemical vapor deposition cluster system.
引用
收藏
页码:704 / 711
页数:8
相关论文
共 18 条
[11]  
SCHNEIDER B, 1998, P OPTO 98 ERF GERM, P233
[12]  
SCHNEIDER B, IN PRESS HDB COMPUTE
[13]  
SCHULTE J, 1996, THESIS U GH SIEGEN G
[14]   REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].
STAEBLER, DL ;
WRONSKI, CR .
APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294
[15]   Technology and device scaling considerations for CMOS imagers [J].
Wong, HS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (12) :2131-2142
[16]  
ZHU Q, 1994, MATER RES SOC SYMP P, V336, P843, DOI 10.1557/PROC-336-843
[17]   Transient behavior of a-Si(C):H bulk barrier color detectors [J].
Zhu, Q ;
Sterzel, J ;
Schneider, B ;
Coors, S ;
Bohm, M .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) :3906-3910
[18]   Bias sensitive α-Si(C):H multispectral detectors [J].
Zhu, Q ;
Coors, S ;
Schneider, B ;
Rieve, P ;
Bohm, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (07) :1393-1398