Compositional, structural, and electrical characterization of plasma oxidized thin aluminum layers for spin-tunnel junctions

被引：24

作者：

Gillies, MF

Kuiper, AET

Coehoorn, R

Donkers, JJTM

机构：

[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

[2] Philips Ctr Mfg Technol, NL-5656 AA Eindhoven, Netherlands

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 01期

关键词：

D O I：

10.1063/1.373677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper we present results on how the plasma oxidation of a thin (1.5 nm) Al layer proceeds. Transmission electron microscopy of a Co/Al-oxide multilayer was used to determine the thickness of the oxides and Rutherford backscattering spectrometry and elastic recoil detection were utilized in order to determine the oxygen content. The oxide was also characterized via ac impedance measurements. These measurements indicated that the oxidation of Al on Co occurs in three discrete steps. (C) 2000 American Institute of Physics. [S0021-8979(00)06713-X].

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页码：429 / 434

页数：6

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