Frequency-dependent Monte Carlo simulations of phonon transport in two-dimensional porous silicon with aligned pores

被引：182

作者：

Hao, Qing ^{[1
]}

Chen, Gang ^{[1
]}

Jeng, Ming-Shan ^{[2
]}

机构：

[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA

[2] Ind Technol Res Inst, Hsinchu 310, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 11期

基金：

美国国家科学基金会;

关键词：

elemental semiconductors; Monte Carlo methods; nanostructured materials; phonons; porous semiconductors; silicon; size effect; thermal conductivity; THERMAL-CONDUCTIVITY; HEAT-TRANSFER; SCATTERING; DISPERSION; MODEL;

D O I：

10.1063/1.3266169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, phonon transport in two-dimensional (2D) porous silicon structures with aligned pores is investigated by Monte Carlo simulations considering the frequency-dependent phonon mean free paths (MFPs). A boundary condition based on the periodic heat flux with constant virtual wall temperature is developed for the studied periodic structures. Such periodic boundary conditions enable the simulation of the lattice thermal conductivities with a minimum computational domain. For the 2D case, it is found that phonon size effects caused by the periodically arranged pores can be remarkable even when the pore size and spacing are much larger than the averaged phonon MFPs. Our results show the importance of considering the frequency dependence of phonon MFPs in the analysis of micro- and nanostructured materials.

引用

页数：10

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