Performance of a 41X41-cm2 amorphous silicon flat panel x-ray detector for radiographic imaging applications

We report the performance of a 41x41-cm(2) amorphous silicon-based flat panel detector designed for radiographic imaging applications. The detector consists of an array of photodiodes and thin film transistor switches on a 0.2-mm pitch with an overlying thallium-doped cesium iodide scintillator. The performance of the detector was evaluated through measurement of the frequency-dependent detective quantum efficiency [DQE(f)]. Measurements of the characteristic curve and modulation transfer function (MTF) are also reported. All measurements were made in a radiographic imaging mode with a readout time of 125 ms. We evaluated a total of 15 detectors. One detector was characterized at a range of exposures and at three different electronic gain settings. Measurements of DQE(f) and MTF were also performed as a function of position on one detector. The measured DQE at an exposure of about 1 mR was 0.66 at zero spatial frequency and fell smoothly with frequency to a value of 0.24 at the Nyquist frequency, 2.5 cycles/mm. The DQE is independent of exposure for exposures in the upper 80% of each gain range, but is reduced somewhat at lower exposures because of the influence of additive system noise. The reduction can be controlled by adjusting the electronic gain. For a gain that allows a maximum exposure of 5 mR, the DQE at 0.056 mR was 0.64 at zero frequency and 0.19 at 2.5 cycles/mm. The standard deviation in DQE among measurements on different detectors was less than 0.02 at any frequency. The presampling MTF was 0.26 at 2.5 cycles/mm. The standard deviation in MTF among measurements on different detectors was less than 0.01 at any frequency. Both MTF and DQE were substantially independent of position on the detector. (C) 2000 American Association of Physicists in Medicine. [S0093-2405(00)00606-4].