Growth and study of SrBi2 (Ta, Nb)2 O9 thin films by pulsed excimer laser ablation

被引：10

作者：

Bhattacharyya, S ^{[1
]}

Bharadwaja, SSN ^{[1
]}

Krupanidhi, SB ^{[1
]}

机构：

[1] Indian Inst Sci, Ctr Mat Res, Bangalore 560012, Karnataka, India

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 114卷 / 11期

关键词：

ferroelectrics; thin films; laser processing; dielectric response;

D O I：

10.1016/S0038-1098(00)00104-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thin films of SrBi2(Ta,Nb)(2)O-9 (SBTN) were grown using pulsed-laser ablation and were ex situ crystallized. Ferroelectric properties were achieved by low temperature deposition. A polycrystalline structure was achieved, with a Ta- to Nb-ratio nearly 1:1. The smaller thickness of the film allowed the switching voltage to be low enough (1.5 V), without affecting the insulating nature of the films. The hysteresis results showed an excellent square shaped loop with a remnant polarization (P-r) of 7.6 mu C/cm(2) and a coercive field (E-c) of 75 kV/cm. This ferroelectric material composition is having a very high Curie temperature with cm higher stability and can be used in non-volatile random access memory (NVRAM) devices. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：585 / 588

页数：4

共 13 条

[1] PREPARATION AND FERROELECTRIC PROPERTIES OF SRBI2TA2O9 THIN-FILMS [J].