Effects of local Joule heating on the reduction of contact resistance between carbon nanotubes and metal electrodes

被引:99
作者
Dong, Lifeng
Youkey, Steven
Bush, Jocelyn
Jiao, Jun [1 ]
Dubin, Valery M.
Chebiam, Ramanan V.
机构
[1] Portland State Univ, Dept Phys, Portland, OR 97207 USA
[2] Intel Corp, Components Res, Hillsboro, OR 97124 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2430769
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report here a practical application of known local Joule heating processes to reduce the contact resistance between carbon nanotubes and metallic electrical contacts. The results presented in this study were obtained from a series of systematic Joule heating experiments on 289 single-walled carbon nanotubes (SWCNTs) and 107 multiwalled carbon nanotubes (MWCNTs). Our experimental results demonstrate that the Joule heating process decreases the contact resistances of SWCNTs and MWCNTs to 70.4% and 77.9% of their initial resistances, respectively. The I-V characteristics of metallic nanotubes become more linear and eventually become independent of the gate voltages (V-gs). For semiconducting nanotubes, the contact resistance has a similar decreasing tendency but the dependency of source-drain current (I-ds) on V-gs does not change with the Joule heating process. This suggests that the reduction of the contact resistance and the decrease of the transport potential barrier are largely attributed to the thermal-energy-induced desorption of adsorbates such as water and oxygen molecules from the nanotube surface and the interface region, as well as thermal-energy-enhanced bonding between the nanotubes and electrode surfaces. In comparison to several other methods including rapid thermal annealing, e-beam lithography patterning of the top metal layer, and focused ion beam induced metal deposition of the top layer, the Joule heating process not only effectively reduces the contact resistance but also simultaneously measures the resistance and monitors the change in the transport potential barrier at the interface region. (c) 2007 American Institute of Physics.
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页数:7
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共 20 条
[1]   Contacting carbon nanotubes selectively with low-ohmic contacts for four-probe electric measurements [J].
Bachtold, A ;
Henny, M ;
Terrier, C ;
Strunk, C ;
Schonenberger, C ;
Salvetat, JP ;
Bonard, JM ;
Forro, L .
APPLIED PHYSICS LETTERS, 1998, 73 (02) :274-276
[2]   Multiwalled carbon nanotubes are ballistic conductors at room temperature [J].
Berger, C ;
Yi, Y ;
Wang, ZL ;
de Heer, WA .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 74 (03) :363-365
[3]   Luttinger-liquid behaviour in carbon nanotubes [J].
Bockrath, M ;
Cobden, DH ;
Lu, J ;
Rinzler, AG ;
Smalley, RE ;
Balents, L ;
McEuen, PL .
NATURE, 1999, 397 (6720) :598-601
[4]   The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors [J].
Chen, ZH ;
Appenzeller, J ;
Knoch, J ;
Lin, YM ;
Avouris, P .
NANO LETTERS, 2005, 5 (07) :1497-1502
[5]   Effects of catalysts on the internal structures of carbon nanotubes and corresponding electron field-emission properties [J].
Dong, L ;
Jiao, J ;
Pan, C ;
Tuggle, DW .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 78 (01) :9-14
[6]   Dielectrophoretically controlled fabrication of single-crystal nickel silicide nanowire interconnects [J].
Dong, LF ;
Bush, J ;
Chirayos, V ;
Solanki, R ;
Jiao, J ;
Ono, Y ;
Conley, JF ;
Ulrich, BD .
NANO LETTERS, 2005, 5 (10) :2112-2115
[7]   Effects of hydrogen on the formation of aligned carbon nanotubes by chemical vapor deposition [J].
Dong, LF ;
Jiao, J ;
Foxley, S ;
Tuggle, DW ;
Mosher, CL ;
Grathoff, GH .
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2002, 2 (02) :155-160
[8]   Floating-potential dielectrophoresis-controlled fabrication of single-carbon-nanotube transistors and their electrical properties [J].
Dong, LF ;
Chirayos, V ;
Bush, J ;
Jiao, J ;
Dubin, VM ;
Chebian, RV ;
Ono, Y ;
Conley, JF ;
Ulrich, BD .
JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (27) :13148-13153
[9]   Carbon nanotube quantum resistors [J].
Frank, S ;
Poncharal, P ;
Wang, ZL ;
de Heer, WA .
SCIENCE, 1998, 280 (5370) :1744-1746
[10]   Carbon nanotubes as Schottky barrier transistors [J].
Heinze, S ;
Tersoff, J ;
Martel, R ;
Derycke, V ;
Appenzeller, J ;
Avouris, P .
PHYSICAL REVIEW LETTERS, 2002, 89 (10)