Characterization of low-dielectric-constant methylsiloxane spin-on-glass films

被引：5

作者：

Yamada, N ^{[1
]}

Takahashi, T ^{[1
]}

机构：

[1] Nippon Steel Corp Ltd, Adv Technol Res Labs, Chiba 2938511, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 3A期

关键词：

SOG; interlayer dielectrics; low k dielectrics; thermal decomposition; methylsiloxane network;

D O I：

10.1143/JJAP.39.1070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structure of the methylsiloxane spin-on-glass (SOG) film obtained by coating the SOG solution prepared from methyltriethoxysilane and dimethyoxymethyl-3,3,3-trifluoropropylsilane, followed by curing at 450 degrees C in nitrogen to decompose the trifluoropropyl group, has been characterized. Outgassing from the SOG film was small except for the organic species derived from a methyl group which began to be desorbed above 500 degrees C. The SOG film was found to consist of particulates with a diameter of several nm. No pores were found in the SOG film by atomic force microscopy (AFM) and transmission electron microscopy (TEM) observations. Pores introduced by the thermal decomposition of a trifluoropropyl group appear to be so small that the boundary between the pore and a siloxane network is ambiguous. A Si-29 nuclear magnetic resonance (NMR) experiment has revealed that new Si-O-Si bonds are formed between the two Si atoms derived from dimethyoxymethyl-3,3,3-trifluoropropylsilane after the thermal decomposition of the trifluoropropyl group.

引用

页码：1070 / 1073

页数：4

共 13 条

[1]

AOI N, 1997, JPN J APPL PHYS, V36, P1335

[2]

AUMAN BC, 1995, MATER RES SOC SYMP P, V381, P19, DOI 10.1557/PROC-381-19

[3] SILSESQUIOXANES [J].

BANEY, RH ;

ITOH, M ;

SAKAKIBARA, A ;

SUZUKI, T .

CHEMICAL REVIEWS, 1995, 95 (05) :1409-1430

[4] QUANTITATIVELY RELIABLE SI-29 MAGIC-ANGLE SPINNING NUCLEAR MAGNETIC-RESONANCE SPECTRA OF SURFACES AND SURFACE-IMMOBILIZED SPECIES AT HIGH-FIELD USING A CONVENTIONAL HIGH-RESOLUTION SPECTROMETER [J].

FYFE, CA ;

GOBBI, GC ;

KENNEDY, GJ .

JOURNAL OF PHYSICAL CHEMISTRY, 1985, 89 (02) :277-281

[5] Organic and inorganic spin-on polymers for low-dielectric-constant applications [J].

Hacker, NP .

MRS BULLETIN, 1997, 22 (10) :33-38

[6]

Kim HH, 1997, ELEC SOC S, V97, P148

[7] Pulsed plasma enhanced chemical vapor deposition from CH2F2, C2H2F4, and CHCIF2 [J].

Labelle, CB ;

Lau, KKS ;

Gleason, KK .

LOW-DIELECTRIC CONSTANT MATERIALS IV, 1998, 511 :75-86

[8]

Ramos T, 1997, MATER RES SOC SYMP P, V443, P91

[9] Templating nanopores into poly(methylsilsesquioxane): New low-dielectric coatings suitable for microelectronic applications [J].

Remenar, JF ;

Hawker, CJ ;

Hedrick, JL ;

Rim, SM ;

Miller, RD ;

Nguyen, C ;

Trollsas, M ;

Yoon, DY .

LOW-DIELECTRIC CONSTANT MATERIALS IV, 1998, 511 :69-74

[10]

*SEM IND ASS, 1997, NAT TECHN ROADM SEM

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