Fast, simple ZnO/organic CMOS integrated circuits

被引：21

作者：

Mourey, Devin A. ^{[1
,2
,3
]}

Park, Sung Kyu ^{[5
]}

Zhao, Dalong A. ^{[1
,2
,4
]}

Sun, Jie ^{[1
,2
,4
]}

Li, Yuanyuan V. ^{[1
,2
,4
]}

Subramanian, Sankar ^{[6
]}

Nelson, Shelby F. ^{[5
]}

Levy, David H. ^{[5
]}

Anthony, John E. ^{[6
]}

Jackson, Thomas N. ^{[1
,2
,4
]}

机构：

[1] Penn State Univ, Ctr Thin Film Devices, University Pk, PA 16802 USA

[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[3] Penn State Univ, Dept Mat Sci Engn, University Pk, PA 16802 USA

[4] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

[5] Eastman Kodak Co, Rochester, NY 14650 USA

[6] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA

来源：

ORGANIC ELECTRONICS | 2009年 / 10卷 / 08期

关键词：

Inorganic-organic hybrid; Organic circuits; Organic thin film transistors; CMOs; TRANSISTORS;

D O I：

10.1016/j.orgel.2009.08.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hybrid organic-inorganic CMOs thin-film circuits are a simple, potentially low-cost, approach for large-area, low-power microelectronic applications. We have used atmospheric pressure processes to deposit inorganic ZnO and organic diF TES-ADT semiconductor layers and an Al2O3 gate dielectric. The organic semiconductor uses a contact-treatment-related microstructure that allows circuits to operate without directly patterning the organic layer. Using a simple 4-mask process with bifunctional Ti/Au contacts for both ZnO and organic transistors, 7-stage ring oscillators were fabricated and operated at >500 kHz corresponding to a propagation delay of <150 ns/stage at a supply bias of 35 V. These are the fastest organic-inorganic CMOs circuits reported to date. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1632 / 1635

页数：4

共 14 条

[1]

*AIM SPIC, AIM SPIC TRANS LEV C

[2] Microwave ZnO thin-film transistors [J].

Bayraktaroglu, Burhan ;

Leedy, Kevin ;

Neidhard, Robert .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (09) :1024-1026

[3]

BONSE M, 1998, EL DEV M 1998 IEDM 9

[4] Hybrid organic inorganic complementary circuits [J].

Dodabalapur, A ;

Baumbach, J ;

Baldwin, K ;

Katz, HE .

APPLIED PHYSICS LETTERS, 1996, 68 (16) :2246-2248

[5] Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits [J].

Gundlach, D. J. ;

Royer, J. E. ;

Park, S. K. ;

Subramanian, S. ;

Jurchescu, O. D. ;

Hamadani, B. H. ;

Moad, A. J. ;

Kline, R. J. ;

Teague, L. C. ;

Kirillov, O. ;

Richter, C. A. ;

Kushmerick, J. G. ;

Richter, L. J. ;

Parkin, S. R. ;

Jackson, T. N. ;

Anthony, J. E. .

NATURE MATERIALS, 2008, 7 (03) :216-221

[6] ZnO-channel thin-film transistors: Channel mobility [J].

Hoffman, RL .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (10) :5813-5819

[7] Correlation between microstructure, electronic properties and flicker noise in organic thin film transistors [J].

Jurchescu, Oana D. ;

Hamadani, Behrang H. ;

Xiong, Hao D. ;

Park, Sungkyu K. ;

Subramanian, Sankar ;

Zimmerman, Neil M. ;

Anthony, John E. ;

Jackson, Thomas N. ;

Gundlach, David J. .

APPLIED PHYSICS LETTERS, 2008, 92 (13)

[8] Stable ZnO thin film transistors by fast open air atomic layer deposition [J].

Levy, David H. ;

Freeman, Diane ;

Nelson, Shelby F. ;

Cowdery-Corvan, Peter J. ;

Irving, Lyn M. .

APPLIED PHYSICS LETTERS, 2008, 92 (19)

[9]

MOUREY DA, 2008, 2008 EL MAT C, V35

[10]

NA JH, 2008, APPL PHYS LETT, V93

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