Chemical vapor deposition of novel carbon materials

被引：42

作者：

Chow, L ^{[1
]}

Zhou, D

Hussain, A

Kleckley, S

Zollinger, K

Schulte, A

Wang, H

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] Univ Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32816 USA

[3] Univ Cent Florida, Dept Mech Mat & Aerosp Engn, Orlando, FL 32816 USA

来源：

THIN SOLID FILMS | 2000年 / 368卷 / 02期

关键词：

chemical vapor deposition; diamond; carbon; scanning electron microscopy;

D O I：

10.1016/S0040-6090(00)00763-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanocrystalline diamond thin films have been prepared using hot filament CVD technique with a mixture of CH4/H-2/Ar as the reactant gas. We demonstrated that the ratio of H-2 to Ar in the reactant gas plays an important role in control of the grain size of diamonds and the growth of the nanocrystalline diamonds. In addition, we have investigated the growth of carbon nanotubes from catalytic CVD using a hydrocarbon as the reactant gas. Furthermore, focused ion beam technique has been developed to control the growth of carbon nanotubes individually. (C) 2000 Elsevier Science S.A. All rights reserved.

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页码：193 / 197

页数：5

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