Monte Carlo simulation of impact ionization in photodetectors

被引：4

作者：

Dunn, GM ^{[1
]}

Rees, GJ ^{[1
]}

David, JPR ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECT & ELECT ENGN,SHEFFIELD S1 4DU,S YORKSHIRE,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 06期

关键词：

D O I：

10.1088/0268-1242/12/6/008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Impact ionization in optical detectors has been studied using a self-consistent Monte Carlo method. Current multiplication was found to be sensitive to both the applied potential and the incident light intensity. The amount of current multiplication was significantly higher than might be expected under the assumption that the field in the device is unchanged by the photogenerated carrier distribution. The potential within the device was also found to be significantly affected by the impact-ionization process and this in turn gave rise to interesting oscillations in the current at higher incident light intensities and potentials.

引用

页码：692 / 697

页数：6

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