Mechanisms of photo-bleaching of 5 eV optical absorption band in hydrogen loaded Ge-doped SiO2

被引:22
作者
Awazu, K
Onuki, H
Muta, K
机构
[1] ELECTROTECH LAB,OPT RADIAT SECT,TSUKUBA,IBARAKI 305,JAPAN
[2] SHOWA ELECT WIRE & CABLE CO LTD,SAGAMIHARA,KANAGAWA,JAPAN
关键词
D O I
10.1016/S0022-3093(96)00613-8
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Photo-induced effects in H-2 loaded 1GeO(2):9SiO(2) glass were studied. The intensity of the absorption band at 5.14 eV was reduced with UV illumination. The neutral oxygen vacancy and also the Gr lone pair centers are reduced with the illumination. There is a one-by-one correlation between the reduction of Ge lone pair centers and the generation of Ge-E' center. We propose that a Ge lone pair center reacts with H-2 molecules in glass to generate a Ce-E' center.
引用
收藏
页码:158 / 163
页数:6
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