Anodic formation of low-aspect-ratio porous alumina films for metal-oxide sensor application

被引:73
作者
Gorokh, G.
Mozalev, A.
Solovei, D.
Khatko, V.
Llobet, E.
Correig, X.
机构
[1] Univ Rovira & Virgili, Dept Elect Engn, Tarragona 43007, Spain
[2] Belarusian State Univ Informat & Radioelect, Dept MMicro & Nanoelect, Minsk 220013, BELARUS
关键词
porous anodic alumina; tungsten trioxide films; rf Sputtering-deposition; gas sensing properties;
D O I
10.1016/j.electacta.2006.01.081
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Thin nanoporous anodic alumina films, of low aspect ratio (1:1), with two distinctive fore sizes and morphologies were prepared by two-step constant-current anodising of aluminium layers on SiO2/Si Substrates in 0.4 mol dm(-3) tartaric (TA) and malonic acid (MA) electrolytes and then modified by open-circuit dissolution. The anodic filius were employed as a Support material for sputtering-deposition of thin WO3 layers in view of exploiting their gas sensing properties. The films and deposits were characterized by scanning electron microscopy, X-ray diffraction and electric resistance measurements at fixed temperatures in the range of 100-300 degrees C upon NH3 and CO gas exposures. Test sensors prepared from the annealed and stabilized alumina-supported WO3 active layers were insensitive to CO but showed considerably enhanced responses to NH3 at 300 degrees C, the sensitivity depending upon the anodic film nature, the pore size and the surface morphology. The increased sensor sensitivity is due to the substantially enlarged film Surface area of the TA-supported WO3 films and the nanostructured, camomile-like morphology of the MA-supported WO3 films. Sensing mechanisms in the alumina-supported WO3 active layers are discussed. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1771 / 1780
页数:10
相关论文
共 49 条
[1]  
AGIUR K, 2002, SENSOR ACTUAT B-CHEM, V84, P1
[2]   A MODEL FOR ELECTROCHROMIC TUNGSTIC OXIDE MICROSTRUCTURE AND DEGRADATION [J].
ARNOLDUSSEN, TC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) :117-123
[3]   Characterization of a WO3 thin film chlorine sensor [J].
Bender, F ;
Kim, C ;
Mlsna, T ;
Vetelino, JF .
SENSORS AND ACTUATORS B-CHEMICAL, 2001, 77 (1-2) :281-286
[4]  
BHUSHAN, 2003, SPRINGER HDB NANOTEC, P130
[5]   Effects of oxygen partial pressure and annealing temperature on the formation of sputtered tungsten oxide films [J].
Bittencourt, C ;
Landers, R ;
Llobet, E ;
Molas, G ;
Correig, X ;
Silva, MAP ;
Sueiras, JE ;
Calderer, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (03) :H81-H86
[6]  
BROCKINGTON J, 1983, INORGANIC CHEM HIGHE, P214
[7]   Cross sensitivity and stability of NO2 sensors from WO3 thin film [J].
Cantalini, C ;
Pelino, M ;
Sun, HT ;
Faccio, M ;
Santucci, S ;
Lozzi, L ;
Passacantando, M .
SENSORS AND ACTUATORS B-CHEMICAL, 1996, 35 (1-3) :112-118
[8]   PERFORMANCE-CHARACTERISTICS OF ELECTROCHROMIC DISPLAYS [J].
CHANG, IF ;
HOWARD, WE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (09) :749-758
[9]   Preparation and characterization of SnO2 and WOx-SnO2 nanosized powders and thick films for gas sensing [J].
Chiorino, A ;
Ghiotti, G ;
Prinetto, F ;
Carotta, MC ;
Malagù, C ;
Martinelli, G .
SENSORS AND ACTUATORS B-CHEMICAL, 2001, 78 (1-3) :89-97
[10]   Stable and highly sensitive gas sensors based on semiconducting oxide nanobelts [J].
Comini, E ;
Faglia, G ;
Sberveglieri, G ;
Pan, ZW ;
Wang, ZL .
APPLIED PHYSICS LETTERS, 2002, 81 (10) :1869-1871