Numerical simulation of broad-area high-power semiconductor laser amplifiers

被引：41

作者：

Dai, Z ^{[1
]}

Michalzik, R ^{[1
]}

Unger, P ^{[1
]}

Ebeling, KJ ^{[1
]}

机构：

[1] UNIV ULM,DEPT OPTOELECT,D-89069 ULM,GERMANY

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1997年 / 33卷 / 12期

关键词：

filamentation; nonlinear distortion; numerical analysis; optical amplifiers; simulation;

D O I：

10.1109/3.644107

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comprehensive model is presented to study the electrical, thermal, and optical behavior of broad-area traveling-wave semiconductor amplifiers, Finite-element thermal analysis and carrier transport mechanisms are integrated into the beam propagation method to include thermal lensing and optically induced nonlinearities, A self-consistent iteration is developed to simulate the beam filamentation in broad-area semiconductor amplifiers with residual facet reflectivities. The experimentally observed periodic filamentation with intensity minima close to zero is investigated numerically.

引用

页码：2240 / 2254

页数：15

共 47 条

[1] FAST-FOURIER-TRANSFORM BASED BEAM-PROPAGATION MODEL FOR STRIPE-GEOMETRY SEMICONDUCTOR-LASERS - INCLUSION OF AXIAL EFFECTS [J].